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VBMB16R20S Product details

Product introduction:

Product introduction: VBMB16R20S is a VBsemi brand single N-type field effect transistor, which is packaged as TO220F using SJ_Multi-EPI technology. Features 600V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth), 150mΩ (VGS=10V) on-resistance, and 20A drain current (ID) .

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 600V 30(±V) 3.5V 20A 150(mΩ) SJ_Multi-EPI
Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 150m次
- Drain current (ID): 20A
- Technology: SJ_Multi-EPI
-Package: TO220F

Domain and module applications:

Examples of applicable fields and modules:
1. Small power power module: suitable for applications such as small power inverters and DC-DC converters, providing stable power conversion and power control.
2. Electric vehicle charging piles: The power switch module can be used in electric vehicle charging piles to control and manage the charging process of electric vehicles.
3. Power management module: In low-power power management systems, it can be used in modules such as switching power supplies, inverters and DC-DC converters to achieve efficient energy conversion.
4. Industrial automation equipment: Power switch modules suitable for industrial control systems, providing precise control of motors and equipment, improving production efficiency and energy utilization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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