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VBMB16R12S Product details

Product introduction:

Product introduction:
VBsemi's VBMB16R12S model is a single N-channel MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This model is manufactured using SJ_Multi-EPI technology and is packaged in TO220F, making it suitable for a variety of application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 600V 30(±V) 3.5V 12A 330(mΩ) SJ_Multi-EPI
Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 330
- Drain current (ID): 12A
- Technology: SJ_Multi-EPI

Domain and module applications:

Application example:
The product is suitable for multiple areas and modules, such as:
1. Power module: Due to its high drain-source voltage and reliability, it can be used in the design of switching power supplies and UPS systems.
2. Electric vehicle charger: With sufficient drain-source current and high voltage tolerance, it is suitable for the design of electric vehicle charger.
3. Industrial motor controller: It can be used as a switching device in industrial motor drivers to achieve efficient motor control and regulation.
4. Solar inverter: Due to its high voltage tolerance and large drain current, it can be used in the design of solar inverters to realize the conversion and utilization of solar energy.

These are just some examples, actual application depends on specific design and requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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