VBMB16R12S Product details
Product introduction:
VBsemi's VBMB16R12S model is a single N-channel MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This model is manufactured using SJ_Multi-EPI technology and is packaged in TO220F, making it suitable for a variety of application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 30(±V) | 3.5V | 12A | 330(mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 330
- Drain current (ID): 12A
- Technology: SJ_Multi-EPI
Domain and module applications:
The product is suitable for multiple areas and modules, such as:
1. Power module: Due to its high drain-source voltage and reliability, it can be used in the design of switching power supplies and UPS systems.
2. Electric vehicle charger: With sufficient drain-source current and high voltage tolerance, it is suitable for the design of electric vehicle charger.
3. Industrial motor controller: It can be used as a switching device in industrial motor drivers to achieve efficient motor control and regulation.
4. Solar inverter: Due to its high voltage tolerance and large drain current, it can be used in the design of solar inverters to realize the conversion and utilization of solar energy.
These are just some examples, actual application depends on specific design and requirements.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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