VBMB16R11 Product details
Product introduction:
VBsemi's VBMB16R11 is a single N-channel field effect transistor (MOSFET) manufactured using a planar process. It has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 11A. This product is packaged in TO220F and is suitable for a variety of application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 30(±V) | 3.5V | 11A | 800 (mΩ) | Plannar |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 800
- Drain current (ID): 11A
- Technology: Flat process
-Package: TO220F
Domain and module applications:
1. Power supply module: The high drain-source voltage and large drain current of VBMB16R11 make it very suitable for use in power switching circuits, such as switching power supplies and inverters.
2. Motor Drivers: Due to its high voltage and current capabilities, this MOSFET can be used in power amplifiers in motor drivers to achieve high performance and reliability.
3. LED lighting control: VBMB16R11 can be used as current regulator and switch controller in LED lighting systems to provide stable lighting output.
4. Industrial automation: In industrial control systems, this MOSFET can be used in modules such as switching power supplies, inverters and motor controllers to achieve efficient power conversion and precise control.
These areas and modules are just some examples of where the VBMB16R11 may be suitable, the actual application depends on the specific circuit design and requirements.
Technical support:
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