VBMB16R08SE Product details
Product introduction:
VBsemi's VBMB16R08SE is a single N-type MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS, positive and negative) of 30V, and a threshold voltage (Vth) of 3.5V. It uses SJ_Deep-Trench technology and is packaged as TO220F.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 30(±V) | 3.5V | 8A | 460(mΩ) | SJ_Deep-Trench |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 460
- Maximum drain current (ID): 8A
Domain and module applications:
- Power management module: Suitable for low-power power management modules, such as mobile phone chargers, laptop adapters, etc., providing efficient power conversion and stable output voltage.
- Automotive electronic systems: Can be used for power management and drive control in automotive electronic systems, such as automotive lighting control, electric vehicle chargers, etc.
- Industrial control system: Suitable for power switches and motor control in industrial control systems, such as industrial automation equipment, robot control systems, etc.
- LED lighting system: In the LED lighting system, it can be used as a switching tube for the LED driver to achieve efficient LED light source control and adjustment, and improve the energy efficiency and reliability of the lighting system.
Technical support:
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