VBMB16R01 Product details
Product introduction:
VBMB16R01 is a Single N-type MOSFET produced by VBsemi, manufactured using Plannar technology. The device has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO220F.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 30(±V) | 3.5V | 1A | 6500 (mΩ) | Plannar |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V gate voltage: 6500m次
- Maximum drain current (ID): 1A
- Technology: Plannar
Domain and module applications:
- Low power switching power supply: Since VBMB16R01 has low drain current and moderate drain resistance, it is suitable for low power switching power supply modules such as small chargers and adapters.
- LED driver: In LED lighting systems, this device can be used for power switching and dimming functions in LED drivers, providing efficient power management and control.
- Signal processors: Due to its low drain current and high drain-source resistance, the VBMB16R01 is suitable for power switches and amplifiers in signal processors.
- Automotive electronics: As a key component in automotive electronic systems, this device can be used to drive small-power motors and perform control tasks for in-car electronic devices.
Technical support:
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