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VBMB16R01 Product details

Product introduction:

Product introduction:
VBMB16R01 is a Single N-type MOSFET produced by VBsemi, manufactured using Plannar technology. The device has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO220F.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 600V 30(±V) 3.5V 1A 6500 (mΩ) Plannar
Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V gate voltage: 6500m次
- Maximum drain current (ID): 1A
- Technology: Plannar

Domain and module applications:

Application example:
- Low power switching power supply: Since VBMB16R01 has low drain current and moderate drain resistance, it is suitable for low power switching power supply modules such as small chargers and adapters.
- LED driver: In LED lighting systems, this device can be used for power switching and dimming functions in LED drivers, providing efficient power management and control.
- Signal processors: Due to its low drain current and high drain-source resistance, the VBMB16R01 is suitable for power switches and amplifiers in signal processors.
- Automotive electronics: As a key component in automotive electronic systems, this device can be used to drive small-power motors and perform control tasks for in-car electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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