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VBMB165R42SFD Product details

Product introduction:

Product introduction: VBMB165R42SFD is a VBsemi brand single N-type field effect transistor produced by Shenzhen Weibi Semiconductor Co., Ltd. The device uses SJ_Multi-EPI technology and is packaged in TO220F. Features 650V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth), 56mΩ (VGS=10V) on-resistance, and 42A drain current (ID) .

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 30(±V) 3.5V 42A 56(mΩ) SJ_Multi-EPI
Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 56m次
- Drain current (ID): 42A
- Technology: SJ_Multi-EPI
-Package: TO220F

Domain and module applications:

Examples of applicable fields and modules:
1. Power management module: Due to its high drain-source voltage and high current capability, it can be used in power management modules such as switching power supplies, inverters and DC-DC converters.
2. Electric vehicle charging piles: It has high drain-source voltage and conduction current, and is suitable for power switches and inverter modules in electric vehicle charging piles.
3. Industrial automation: It can be used in fields such as industrial drives, motor controls, and power inverters to achieve high-efficiency and high-power-density power conversion.
4. Solar Inverter: In a solar power generation system, a solar inverter can be used to convert DC power into AC power and inject it into the grid.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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