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VBMB165R38SFD Product details

Product introduction:

Product introduction:
The VBMB165R38SFD is a single N-channel MOSFET model produced by VBsemi. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and a drain current (ID) of 38A. Manufactured using SJ_Multi-EPI technology. The device is packaged in TO220F.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 30(±V) 3.5V 38A 67(mΩ) SJ_Multi-EPI
Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 67
- Drain current (ID): 38A
- Technology: SJ_Multi-EPI

Domain and module applications:

Examples of applicable fields and modules:
1. Power supply module: The high drain-source voltage and high current characteristics of VBMB165R38SFD make it very suitable for power supply modules such as power inverters and switching power supplies.
2. Automotive electronic systems: Due to its high voltage and high current capabilities, this device is often used in electric vehicle charging piles and electric vehicle control modules in automotive electronic systems.
3. Industrial control system: VBMB165R38SFD can be used in power switching devices in industrial control systems, such as frequency converters and motor drivers.
4. Solar Inverter: Its high voltage and high current characteristics make it an ideal choice in solar inverter for converting DC power generated by solar panels into AC power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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