VBMB165R38SFD Product details
Product introduction:
The VBMB165R38SFD is a single N-channel MOSFET model produced by VBsemi. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and a drain current (ID) of 38A. Manufactured using SJ_Multi-EPI technology. The device is packaged in TO220F.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 30(±V) | 3.5V | 38A | 67(mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 67
- Drain current (ID): 38A
- Technology: SJ_Multi-EPI
Domain and module applications:
1. Power supply module: The high drain-source voltage and high current characteristics of VBMB165R38SFD make it very suitable for power supply modules such as power inverters and switching power supplies.
2. Automotive electronic systems: Due to its high voltage and high current capabilities, this device is often used in electric vehicle charging piles and electric vehicle control modules in automotive electronic systems.
3. Industrial control system: VBMB165R38SFD can be used in power switching devices in industrial control systems, such as frequency converters and motor drivers.
4. Solar Inverter: Its high voltage and high current characteristics make it an ideal choice in solar inverter for converting DC power generated by solar panels into AC power.
Technical support:
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