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VBMB165R34SFD Product details

Product introduction:

Product introduction:
VBMB165R34SFD is a single N-channel MOSFET model produced by VBsemi. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and a drain current (ID) of 34A. Manufactured using SJ_Multi-EPI technology and packaged as TO220F.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 30(±V) 3.5V 34A 80(mΩ) SJ_Multi-EPI
Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 80
- Drain current (ID): 34A
- Technology: SJ_Multi-EPI

Domain and module applications:

Examples of applicable fields and modules:
1. Industrial power module: Due to its high drain-source voltage and moderate drain current characteristics, VBMB165R34SFD can be used in industrial power modules, such as inverters and UPS power supplies.
2. Wind energy conversion system: This device is suitable for power switching devices in wind energy conversion systems and is used to control the output current of wind turbines.
3. Electric vehicle charging piles: The high voltage and current characteristics of VBMB165R34SFD make it an ideal choice for electric vehicle charging piles to achieve fast charging of electric vehicles.
4. Solar inverter: This device can be used in solar inverters to convert DC power generated by solar panels into AC power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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