VBMB165R34SFD Product details
Product introduction:
VBMB165R34SFD is a single N-channel MOSFET model produced by VBsemi. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and a drain current (ID) of 34A. Manufactured using SJ_Multi-EPI technology and packaged as TO220F.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 30(±V) | 3.5V | 34A | 80(mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 80
- Drain current (ID): 34A
- Technology: SJ_Multi-EPI
Domain and module applications:
1. Industrial power module: Due to its high drain-source voltage and moderate drain current characteristics, VBMB165R34SFD can be used in industrial power modules, such as inverters and UPS power supplies.
2. Wind energy conversion system: This device is suitable for power switching devices in wind energy conversion systems and is used to control the output current of wind turbines.
3. Electric vehicle charging piles: The high voltage and current characteristics of VBMB165R34SFD make it an ideal choice for electric vehicle charging piles to achieve fast charging of electric vehicles.
4. Solar inverter: This device can be used in solar inverters to convert DC power generated by solar panels into AC power.
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