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VBMB165R32S Product details

Product introduction:

Product introduction: VBMB165R32S is a VBsemi brand single N-type field effect transistor, which is packaged as TO220F using SJ_Multi-EPI technology. Features 650V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth), 85mΩ (VGS=10V) on-resistance, and 32A drain current (ID) .

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 30(±V) 3.5V 32A 85(mΩ) SJ_Multi-EPI
Detailed parameter description:
- Drain-Source Voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 85m次
- Drain current (ID): 32A
- Technology: SJ_Multi-EPI
-Package: TO220F

Domain and module applications:

Examples of applicable fields and modules:
1. Power management module: It can be used in power management modules such as switching power supplies, inverters and DC-DC converters to achieve efficient power conversion and power control.
2. Automotive electronic systems: Suitable for drive systems, charging piles and battery management systems of electric vehicles, providing stable power supply and efficient power control.
3. Industrial automation equipment: In the fields of industrial drives, motor controls and power inverters, high power density power conversion and precise motor control can be achieved.
4. Solar and wind energy converters: used in solar inverters, wind power inverters and other fields to convert renewable energy into usable electrical energy and inject it into the grid.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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