VBMB165R18S Product details
Product introduction:
VBMB165R18S is a Single N-type MOSFET produced by VBsemi, manufactured using SJ_Multi-EPI technology. The device has a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO220F.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 30(±V) | 3.5V | 18A | 230(mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V gate voltage: 230m次
- Maximum drain current (ID): 18A
- Technology: SJ_Multi-EPI
Domain and module applications:
- Power module: VBMB165R18S is suitable for various power modules, such as switching power supplies, inverters and frequency converters, and can be used in industrial, automotive and home electronic equipment.
- Solar inverter: Due to its high voltage and high current characteristics, this device is suitable for use in solar inverters to convert DC power generated by solar panels into AC power.
- Electric vehicle charging pile: As a power switch and inverter in an electric vehicle charging pile, it can efficiently convert electrical energy to charge electric vehicles.
- Industrial electronics: In the field of industrial automation, VBMB165R18S can be used to control high-power equipment and perform industrial automation tasks such as motor control and sensor interfacing.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image