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VBMB165R18S Product details

Product introduction:

Product introduction:
VBMB165R18S is a Single N-type MOSFET produced by VBsemi, manufactured using SJ_Multi-EPI technology. The device has a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO220F.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 30(±V) 3.5V 18A 230(mΩ) SJ_Multi-EPI
Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V gate voltage: 230m次
- Maximum drain current (ID): 18A
- Technology: SJ_Multi-EPI

Domain and module applications:

Application example:
- Power module: VBMB165R18S is suitable for various power modules, such as switching power supplies, inverters and frequency converters, and can be used in industrial, automotive and home electronic equipment.
- Solar inverter: Due to its high voltage and high current characteristics, this device is suitable for use in solar inverters to convert DC power generated by solar panels into AC power.
- Electric vehicle charging pile: As a power switch and inverter in an electric vehicle charging pile, it can efficiently convert electrical energy to charge electric vehicles.
- Industrial electronics: In the field of industrial automation, VBMB165R18S can be used to control high-power equipment and perform industrial automation tasks such as motor control and sensor interfacing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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