VBMB165R15SE Product details
Product introduction:
VBMB165R15SE is a single N-type field effect transistor produced by VBsemi brand. It adopts SJ_Deep-Trench technology and is packaged as TO220F. The product has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 15A. The VBMB165R15SE product has high drain current and low drain resistance and is suitable for a variety of fields and modules.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 30(±V) | 3.5V | 15A | 220(mΩ) | SJ_Deep-Trench |
1. VDS (drain-source voltage): 650V
2. VGS (gate-source voltage): ㊣30V
3. Vth (threshold voltage): 3.5V
4. Drain resistance (m次) when VGS=10V: 220m次
5. ID (drain current): 15A
6. Technology: SJ_Deep-Trench
7. Package: TO220F
Domain and module applications:
1. Power switch module: VBMB165R15SE can be used as a switching power supply in the power switch module to provide stable power output and is suitable for industrial equipment and electronic systems.
2. Electric vehicle controller: In electric vehicle controllers, this type of transistor can be used for motor drive and power control of electric vehicles to improve the vehicle's power performance and energy efficiency.
3. Automobile engine control module: Suitable for power management and circuit protection in automobile engine control modules to ensure the safe operation and stability of the automobile engine system.
4. Industrial automation system: In industrial automation systems, VBMB165R15SE can be used for various motor controls, switches and adjustments to help realize automation and intelligence in industrial production.
The above is an introduction to the VBMB165R15SE product, detailed parameter descriptions, and examples of applicable fields and modules.
Technical support:
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