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VBMB165R12 Product details

Product introduction:

Product introduction: VBsemi's VBMB165R12 is a single N-channel MOSFET with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It is manufactured using planar technology and has a TO220F package, suitable for various application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 30(±V) 3.5V 12A 680 (mΩ) Plannar
Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 650V, VGS (gate-source voltage) is ㊣30V.
- Threshold voltage: Vth (threshold voltage) is 3.5V.
- Current parameters: When VGS=10V, the minimum resistance at turn-on is 680m次, and the maximum drain current is 12A.

Domain and module applications:

Examples of applicable fields and modules:
1. Industrial power supply: Due to its high voltage and current characteristics, VBMB165R12 can be used in switching power supply modules in industrial power supplies to provide reliable power conversion.
2. Electric vehicle charger: Its high voltage and tolerance make it a key component in electric vehicle chargers, ensuring efficient and safe battery charging.
3. Solar inverter: In the solar inverter, VBMB165R12 can be used as a switching tube to convert the DC power generated by the solar panel to AC power and promote the utilization of renewable energy.

The above is an introduction to VBsemi's VBMB165R12 product, detailed parameter descriptions, and examples of applicable fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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