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VBMB165R11 Product details

Product introduction:

Product introduction:
VBsemi's VBMB165R11 is a Single N field effect transistor manufactured using Plannar technology. Features a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. At VGS=10V, the drain-source resistance (RDS(on)) is 800mΩ and the maximum drain current (ID) is 11A. The package form is TO220F.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 30(±V) 3.5V 11A 800 (mΩ) Plannar
Detailed parameter description:
- Voltage parameters: drain-source voltage (VDS) is 650V, gate-source voltage (VGS) is ㊣30V, threshold voltage (Vth) is 3.5V.
- Current parameters: When VGS=10V, the drain-source resistance (RDS(on)) is 800m次, and the maximum drain current (ID) is 11A.
- Technology: Made with Plannar technology.

Domain and module applications:

Examples of applicable fields and modules:
1. Electric vehicle drive: Because VBMB165R11 has high drain-source voltage and current capabilities, it can be used as a power switch module in an electric vehicle drive system to achieve motor control and energy conversion.
2. High-power power module: In industrial applications, this device can be used in high-power power modules, such as high-power DC-DC converters or inverters, to meet the power needs of industrial equipment.
3. Solar inverter: In solar power generation systems, VBMB165R11 can be used as the power switch module in the inverter to convert solar energy into usable electrical energy to provide clean energy for home or commercial purposes.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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