VBMB165R11 Product details
Product introduction:
VBsemi's VBMB165R11 is a Single N field effect transistor manufactured using Plannar technology. Features a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. At VGS=10V, the drain-source resistance (RDS(on)) is 800mΩ and the maximum drain current (ID) is 11A. The package form is TO220F.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 30(±V) | 3.5V | 11A | 800 (mΩ) | Plannar |
- Voltage parameters: drain-source voltage (VDS) is 650V, gate-source voltage (VGS) is ㊣30V, threshold voltage (Vth) is 3.5V.
- Current parameters: When VGS=10V, the drain-source resistance (RDS(on)) is 800m次, and the maximum drain current (ID) is 11A.
- Technology: Made with Plannar technology.
Domain and module applications:
1. Electric vehicle drive: Because VBMB165R11 has high drain-source voltage and current capabilities, it can be used as a power switch module in an electric vehicle drive system to achieve motor control and energy conversion.
2. High-power power module: In industrial applications, this device can be used in high-power power modules, such as high-power DC-DC converters or inverters, to meet the power needs of industrial equipment.
3. Solar inverter: In solar power generation systems, VBMB165R11 can be used as the power switch module in the inverter to convert solar energy into usable electrical energy to provide clean energy for home or commercial purposes.
Technical support:
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