VBMB165R10S Product details
Product introduction:
VBsemi's VBMB165R10S is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 10A. Using SJ_Multi-EPI technology, the package is TO220F.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 30(±V) | 3.5V | 10A | 360(mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 360
- Drain current (ID): 10A
- Technology: SJ_Multi-EPI
-Package: TO220F
Domain and module applications:
1. High-voltage power module: Because VBMB165R10S has high drain-source voltage and drain current, it is suitable for the design of high-voltage power modules, such as electric vehicle charging piles, industrial power supplies, etc.
2. Inverter module: The high withstand voltage and low on-resistance characteristics of VBMB165R10S make it suitable for inverter modules and can be used in solar inverters, variable frequency air conditioners and other fields.
3. Consumer electronic products: Because its package is TO220F, it is suitable for power switch modules of some consumer electronic products, such as induction cookers, variable frequency electric fans, etc.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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