VBMB165R10 Product details
Product introduction:
VBMB165R10 is a VBsemi brand single N-channel MOSFET using Plannar technology for high performance and reliability. The product has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Its package is TO220F, which is suitable for various application scenarios.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 30(±V) | 3.5V | 10A | 830(mΩ) | Plannar |
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- Drain-source resistance (m次) at VGS=10V: 830
- Maximum drain current (ID): 10A
- Technology: Plannar
-Package: TO220F
Domain and module applications:
1. Power inverter module: VBMB165R10 is suitable for power switches in solar inverters, UPS systems, etc., to achieve conversion of DC power to AC power, and can be used for home and commercial purposes.
2. Electric vehicle drive module: Due to its high voltage and high current capability, this product is suitable for electric vehicle drive modules, such as motor controllers and battery management systems.
3. Industrial power module: In the field of industrial power supply, VBMB165R10 can be used as a power switch in industrial power modules to provide stable power output and current regulation.
4. Automotive electronic modules: As a power switch in automotive electronic control circuits, this product can be used in automotive electronic modules, such as engine control units (ECUs) and vehicle chargers.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image