VBMB165R07SE Product details
Product introduction:
VBMB165R07SE is a single N-channel field effect transistor launched by the VBsemi brand. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product is manufactured using SJ_Deep-Trench technology and has excellent performance and stability. The package form is TO220F.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 30(±V) | 3.5V | 7A | 600(mΩ) | SJ_Deep-Trench |
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 600
- Maximum drain current (ID): 7A
- Technology: SJ_Deep-Trench
Domain and module applications:
1. Power switch module: Because VBMB165R07SE has a high drain-source voltage and on-current, it is suitable for power switch modules, such as switching power supplies, inverters, etc.
2. Electric vehicle motor control module: The high voltage and current characteristics of this product make it suitable for electric vehicle motor control modules to achieve power output and drive control of electric vehicles.
3. Inverter air conditioning module: VBMB165R07SE can be used as the power switch in the inverter air conditioner module to realize power regulation and control of the inverter air conditioner and improve the energy efficiency of the air conditioning system.
4. Solar inverter: This product is suitable for power switch modules in solar inverters, which can achieve stable operation and efficient conversion of solar power generation systems.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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