VBMB165R02 Product details
Product introduction:
VBsemi's VBMB165R02 is a Single N field effect transistor manufactured using Plannar technology. Features a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. At VGS=10V, the drain-source resistance (RDS(on)) is 1700mΩ and the maximum drain current (ID) is 2A. The package form is TO220F.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 30(±V) | 3.5V | 2A | 1700 (mΩ) | Plannar |
- Voltage parameters: drain-source voltage (VDS) is 650V, gate-source voltage (VGS) is ㊣30V, threshold voltage (Vth) is 3.5V.
- Current parameters: When VGS=10V, the drain-source resistance (RDS(on)) is 1700m次, and the maximum drain current (ID) is 2A.
- Technology: Made with Plannar technology.
Domain and module applications:
1. Industrial power module: Since VBMB165R02 has moderate drain-source voltage and current, it can be used in switching power supplies or inverters in industrial power modules.
2. High-frequency modulation: Its low drain-source resistance makes it suitable for high-frequency modulation modules, such as RF power amplifiers in wireless communication systems.
3. Lighting control: In the field of lighting control, VBMB165R02 can be used for LED drivers or power switches in lighting systems.
Technical support:
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