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VBMB165R02 Product details

Product introduction:

Product introduction:
VBsemi's VBMB165R02 is a Single N field effect transistor manufactured using Plannar technology. Features a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. At VGS=10V, the drain-source resistance (RDS(on)) is 1700mΩ and the maximum drain current (ID) is 2A. The package form is TO220F.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 30(±V) 3.5V 2A 1700 (mΩ) Plannar
Detailed parameter description:
- Voltage parameters: drain-source voltage (VDS) is 650V, gate-source voltage (VGS) is ㊣30V, threshold voltage (Vth) is 3.5V.
- Current parameters: When VGS=10V, the drain-source resistance (RDS(on)) is 1700m次, and the maximum drain current (ID) is 2A.
- Technology: Made with Plannar technology.

Domain and module applications:

Examples of applicable fields and modules:
1. Industrial power module: Since VBMB165R02 has moderate drain-source voltage and current, it can be used in switching power supplies or inverters in industrial power modules.
2. High-frequency modulation: Its low drain-source resistance makes it suitable for high-frequency modulation modules, such as RF power amplifiers in wireless communication systems.
3. Lighting control: In the field of lighting control, VBMB165R02 can be used for LED drivers or power switches in lighting systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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