VBMB155R24 Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 30(±V) | 3.5V | 24A | 200 (mΩ) | Plannar |
- Structure type: Single N
- Rated drain-source voltage (VDS): 550V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (VGS=10V): 200 m次
- Drain current (ID): 24A
- Technology: Plannar
Package: TO220F
Domain and module applications:
1. Industrial inverter:"
The VBMB155R24 has a high drain current and low drain-source resistance, making it suitable as a power switch element in industrial inverters to achieve precise control and speed regulation of motors.
2. High-efficiency power module:
In high-efficiency power modules, power MOSFETs are required to achieve efficient power conversion. The TO220F package and Plannar technology of VBMB155R24 make it suitable for power switching and current regulation functions in high-efficiency power modules.
3. Solar Inverter:
In a solar inverter, a power MOSFET is required to invert the DC power generated by the solar panel into AC power. The high drain current and low drain-source resistance characteristics of the VBMB155R24 make it ideal for use in inverters.
Technical support:
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