Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
TO220F |
Single-N |
30V |
20(±V) |
1.7V |
68A |
|
2 (mΩ) |
1 (mΩ) |
Trench |
parameter:
- Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 30V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- On-resistance (RDS(on)) at VGS=4.5V: 2 m次
- On-resistance (RDS(on)) at VGS=10V: 1 m次
- Maximum drain current (ID): 68A
- Technology: Trench
Package: TO220F
Domain and module applications:
This MOSFET is suitable for many fields and modules, here are some examples:
1. Electric vehicle module: Electric control modules suitable for electric vehicles and electric bicycles, such as motor drivers and battery management systems, providing efficient power conversion and stable motor control.
2. Industrial power module: In industrial equipment and machinery, it can be used in high-power industrial power supplies and power inverters and other modules to provide reliable power supply and stable power output.
3. Power amplification module: suitable for modules such as audio amplifiers and power amplifiers, which can achieve high-quality audio amplification and power amplification and provide clear and stable audio output.
4. High-performance power module: Suitable for power management systems in servers and data centers, such as UPS and server power supplies, providing efficient power conversion and reliable power supply.
5. Power electronic modules: In power electronic products such as variable frequency air conditioners and variable frequency drives, they can be used in power factor correction and power conditioning modules to provide stable power supply and energy-saving effects.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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