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VBMB1303 Product details

Product introduction:

VBMB1303 is an TO220F-packaged N-channel MOSFET, utilizing Trench technology.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 30V 20(±V) 1.7V 140A 5 (mΩ) 4 (mΩ) Trench
parameter:
- Type: Unipolar N-type
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source resistance (m次) at VGS=4.5V: 5
- Drain-source resistance (m次) at VGS=10V: 4
- Drain current (ID): 140A
- Technology: Trench
Package: TO220F

Domain and module applications:

Product model: VBMB1303
This VBMB1303 product is suitable for the following fields and modules:
1. Power module: Due to its high drain current and low drain-source resistance, it can be used to design high-performance switching power supply modules such as DC-DC converters and AC-DC converters. DC) converter.
2. Motor drive: Due to its high voltage and high drain current characteristics, it can be used in motor drive modules, such as electric vehicle controllers and industrial motor drivers.
3. Inverter: Suitable for designing inverter modules, such as solar inverters and power electronic inverters, to convert DC power into AC power or adjust the frequency and voltage of AC power.
4. Supercapacitor charging and discharging module: Due to its high current characteristics, it can be used to design modules for supercapacitor charging and discharging for energy storage and release applications, such as renewable energy systems and electric vehicle braking energy recovery systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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