VBMB1251K Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 250V | 20(±V) | 3V | 4.4A | 1100 (mΩ) | Trench |
- Type: Single N-channel MOSFET
- Rated drain-source voltage (VDS): 250V
- Standard gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (miohms) at gate-source voltage 10V: 1100
- Drain current (ID): 4.4A
- Technology: Trench
Package: TO220F
Domain and module applications:
1. Power switch module: Since VBMB1251K has a high rated voltage and moderate drain current, it is suitable for various power switch modules, such as switching power supplies and DC regulators. In switching power supplies, it can be used as a power switching device in switching circuits to achieve voltage conversion and current control.
2. Power tools: This MOSFET can be used in motor control modules in power tools, such as electric drills and electric hammers. Its high voltage and low drain-source resistance characteristics ensure efficient operation and long-term stability of the power tool.
3. Solar inverter: In solar inverter, VBMB1251K can be used as a high-voltage switching device to help realize energy conversion from photovoltaic cells to the grid. Its high rated voltage and stable performance ensure efficient operation and reliability of the solar inverter system.
Technical support:
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