VBMB1151M Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 150V | 20(±V) | 2.5V | 35A | 100 (mΩ) | Trench |
- Product type: Single N-channel field effect transistor (Single N-MOSFET)
- Maximum drain-source voltage (VDS): 150V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 2.5V
- Drain-source resistance (m次) at VGS=10V: 100
- Maximum drain current (ID): 35A
- Technology: Trench
-Package: TO220F
Domain and module applications:
1. Power module: VBMB1151M is suitable for switching power supplies, DC-DC converters and inverters in power modules. Its high drain-source voltage and current characteristics ensure stable and efficient operation of the module, while high drain-source resistance reduces power consumption and losses.
2. Automotive electronic modules: In the field of automotive electronics, VBMB1151M can be used for on-board power management, motor drive and lighting control modules. Its high voltage and current capabilities can meet the high power and performance needs of automotive electronic equipment, while the TO220F package can provide good heat dissipation performance.
3. Industrial control module: In the field of industrial control, VBMB1151M can be used for power management, drive control and power regulation modules in industrial control systems. Its reliable performance and high power processing capabilities make it an important part of industrial control modules, improving system reliability and efficiency.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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