Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
TO220F |
Single-N |
150V |
20(±V) |
2.5V |
35A |
|
|
100 (mΩ) |
Trench |
Detailed parameter description:
- Product type: Single N-channel field effect transistor (Single N-MOSFET)
- Maximum drain-source voltage (VDS): 150V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 2.5V
- Drain-source resistance (m次) at VGS=10V: 100
- Maximum drain current (ID): 35A
- Technology: Trench
-Package: TO220F
Domain and module applications:
Its features include high drain-source voltage and moderate drain current, as well as high drain-source resistance, making it widely used in the following fields and modules:
1. Power module: VBMB1151M is suitable for switching power supplies, DC-DC converters and inverters in power modules. Its high drain-source voltage and current characteristics ensure stable and efficient operation of the module, while high drain-source resistance reduces power consumption and losses.
2. Automotive electronic modules: In the field of automotive electronics, VBMB1151M can be used for on-board power management, motor drive and lighting control modules. Its high voltage and current capabilities can meet the high power and performance needs of automotive electronic equipment, while the TO220F package can provide good heat dissipation performance.
3. Industrial control module: In the field of industrial control, VBMB1151M can be used for power management, drive control and power regulation modules in industrial control systems. Its reliable performance and high power processing capabilities make it an important part of industrial control modules, improving system reliability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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