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VBM2202K Product details

Product introduction:

VBM2202K is a VBsemi brand single-channel P-type metal oxide semiconductor field effect transistor (MOSFET). The device is manufactured using trench technology.
The high performance and reliability of the VBM2202K enable it to play an important role in a variety of industrial and consumer electronics applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-P -200V 20(±V) -2V -4.5A 2400 (mΩ) 2000 (mΩ) Trench
The device is manufactured using trench technology and has the following main parameters:

- Rated drain-source voltage (VDS): -200V
- Gate-source voltage (VGS) range: ㊣20V
- Threshold voltage (Vth): -2V
- Drain-source resistance (RDS(on)) when gate-source voltage is 4.5V: 2400m次
- Drain-source resistance (RDS(on)) when gate-source voltage is 10V: 2000m次
- Maximum drain current (ID): -4.5A

Domain and module applications:

The device is packaged in TO220. The application of trench technology gives it excellent performance in various applications.
For example, in power modules, VBM2202K is suitable for DC-DC converters, battery management systems and other fields. Its high rated voltage and low on-resistance make it particularly suitable for applications that need to withstand high voltage and high power, such as motor control modules in industrial automation equipment, inverter modules in UPS systems, etc. In addition, its high threshold voltage and low static power consumption also make it ideal for applications such as power adapters and power tool control modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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