Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-P |
-100V |
20（±V） |
-2V |
-100A |
|
13 (mΩ) |
11 (mΩ) |
Trench |
has the following parameters:
The maximum drain-source voltage (VDS) is -100V, the maximum gate-source voltage (VGS) is ㊣20V, and the threshold voltage (Vth) is -2V.
When the gate-source voltage is 4.5V, the drain-source resistance is 13m次; when the gate-source voltage is 10V, the drain-source resistance is 11m次. Its maximum drain current (ID) is -100A
Domain and module applications：
The VBM2101N transistor is suitable for a variety of fields and modules.
For example, in power amplifier modules, it can be used in audio amplifiers, power amplifiers and power switches. Due to its high drain-source current and low drain-source resistance, this transistor is particularly suitable for applications requiring high power density and high efficiency. In power management modules, it can be used in DC-DC converters, power switches and inverters. In addition, in industrial control modules, it can be used for motor control, power protection and power management. In short, the VBM2101N transistor has broad application prospects in various power control, power management and signal processing modules, and can provide high performance and reliability support for electronic equipment in different fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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