VBM19R20S Product details
Product introduction:
VBM19R20S is a single N-channel MOSFET produced by VBsemi, with a drain-source voltage (VDS) of 900V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It adopts SJ_Multi-EPI technology and is packaged in TO220. This product features high drain current and moderate on-resistance, making it suitable for a variety of high-power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 900V | 30(±V) | 3.5V | 20A | 270 (mΩ) | SJ_Multi-EPI |
- VDS (drain-source voltage): 900V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance (m次) at VGS=10V: 270m次
- Maximum drain current (ID): 20A
- Technology: SJ_Multi-EPI
-Package: TO220
Domain and module applications:
Examples of applicable fields and modules:
1. Industrial power module: Because VBM19R20S has high drain current and moderate on-resistance, it is suitable for switching power supplies and inverter modules in industrial power modules.
2. High-performance electric vehicle charging piles: It can be used in power switches and control circuits in high-power electric vehicle charging piles to achieve fast charging.
3. High-power LED lighting: Suitable for power switching and dimming control in high-power LED lighting applications, providing powerful lighting solutions.
4. Industrial automation equipment: In the field of industrial automation, this product can be used for power switches and control circuits in PLC, frequency converters, servo drives and other equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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