VBM19R09S Product details
Product introduction:
VBsemi's VBM19R09S is a single N-channel field effect transistor product with a drain-source voltage (VDS) of 900V, a drain current (ID) of 9A, and uses SJ_Multi-EPI technology. This product is packaged in TO220 and is suitable for a variety of applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 900V | 30(±V) | 3.5V | 9A | 750 (mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 750m次
- Drain current (ID): 9A
- Technology: SJ_Multi-EPI
Domain and module applications:
1. Industrial power module: VBM19R09S is suitable for industrial power modules and can be used for power management and control of various industrial equipment.
2. Solar inverter: This product can be used in solar inverter modules to realize the conversion and output of solar energy and can be used in home and commercial solar power generation systems.
3. Electric vehicle drive system: In the field of electric vehicles, VBM19R09S can be used in the motor control unit (MCU) of electric vehicles to realize power transmission and control of electric vehicles.
4. LED lighting driver: In the field of LED lighting, this product can be used in LED driver circuits to provide stable current output for indoor and outdoor LED lighting equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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