VBM195R09 Product details
Product introduction:
VBM195R09 is a single N-type power field effect transistor (MOSFET) launched by VBsemi, using Plannar technology. This product has the characteristics of high withstand voltage and low on-resistance, and is suitable for various power electronic applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 950V | 30(±V) | 3.5V | 9A | 1700 (mΩ) | Plannar |
- Brand: VBsemi
- Model: VBM195R09
- Type: Single N-type power MOSFET
- Rated voltage (VDS): 950V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(on)) when gate-source voltage is 10V: 1700 m次
- Rated current (ID): 9A
- Technology: Plannar
-Package:TO220
Domain and module applications:
1. Power adapter: Since VBM195R09 has moderate voltage and current parameters, it can be used in switching power supplies and voltage regulator modules in power adapters.
2. LED light driver: In the field of LED lighting, VBM195R09 can be used as a power switching device in the LED light driver for dimming and driving LED lights.
3. Industrial control devices: The device's high withstand voltage and low on-resistance characteristics make it suitable for use in power switching modules in industrial control devices, such as motor controllers and temperature controllers.
The above is an introduction to the VBM195R09 product, detailed parameter descriptions and examples of paragraph formats for applicable fields.
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