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VBM195R09 Product details

Product introduction:

Product introduction:
VBM195R09 is a single N-type power field effect transistor (MOSFET) launched by VBsemi, using Plannar technology. This product has the characteristics of high withstand voltage and low on-resistance, and is suitable for various power electronic applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 950V 30(±V) 3.5V 9A 1700 (mΩ) Plannar
Detailed parameter description:
- Brand: VBsemi
- Model: VBM195R09
- Type: Single N-type power MOSFET
- Rated voltage (VDS): 950V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(on)) when gate-source voltage is 10V: 1700 m次
- Rated current (ID): 9A
- Technology: Plannar
-Package:TO220

Domain and module applications:

Examples of applicable fields and modules:
1. Power adapter: Since VBM195R09 has moderate voltage and current parameters, it can be used in switching power supplies and voltage regulator modules in power adapters.
2. LED light driver: In the field of LED lighting, VBM195R09 can be used as a power switching device in the LED light driver for dimming and driving LED lights.
3. Industrial control devices: The device's high withstand voltage and low on-resistance characteristics make it suitable for use in power switching modules in industrial control devices, such as motor controllers and temperature controllers.

The above is an introduction to the VBM195R09 product, detailed parameter descriptions and examples of paragraph formats for applicable fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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