VBM18R05S Product details
Product introduction:
VBsemi's VBM18R05S model is a single N-channel field effect transistor (Single N) with the following main parameters:
- Rated drain-source voltage (VDS): 800V
- Rated gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- Drain-source on-resistance (mΩ) at VGS=10V: 1300
- Maximum drain current (ID): 5A
- Technology: SJ_Multi-EPI
-Package:TO220
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 800V | 30(±V) | 3.5V | 5A | 1300 (mΩ) | SJ_Multi-EPI |
- Product model: VBM18R05S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Rated voltage: VDS=800V, VGS=㊣30V
- Threshold voltage: Vth=3.5V
- Drain-source on-resistance (when VGS=10V): 1300m次
- Maximum drain current: 5A
- Technology: SJ_Multi-EPI
-Package:TO220
Domain and module applications:
Examples of applicable fields and modules:
- Industrial power module: Suitable for power modules that require stable high-voltage output in the industrial field, such as high-voltage power equipment and high-voltage industrial control systems.
- Renewable energy systems: Inverter modules that can be used in solar or wind power generation systems to provide efficient power conversion.
- Automotive electronic modules: Suitable for power management and drive control modules in automotive electronic systems, such as inverters and charging piles for electric vehicles.
Technical support:
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