Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
850V |
30（±V） |
3.5V |
5A |
|
|
2200 (mΩ) |
Plannar |
Detailed parameter description:
- Model: VBM185R05
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Technology: Plannar
- Drain-source voltage (VDS): 850V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 2200m次
- Maximum drain current (ID): 5A
-Package:TO220
Domain and module applications：
Applicable areas and modules:
This product is suitable for the following areas and modules:
1. Power management module: Due to its high drain-source voltage and moderate on-resistance, it is suitable for designing high-voltage switching power supplies and voltage regulators.
2. Electric vehicle controller: It can be used in the power electronic controller of electric vehicles to achieve high-efficiency drive and control of the electric motor.
3. Wind power generation system: In the wind power generation system, it can be used in inverters and control modules to convert wind energy into electrical energy and connect it to the grid.
4. Industrial welding equipment: In industrial welding equipment, it can be used in power switch modules to provide reliable power supply and control functions.
These are just some examples, in fact this product may also be suitable for many other fields and modules, depending on its technical parameters and application requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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