VBM17R08SE Product details
Product introduction:
VBsemi's VBM17R08SE is a single N-channel MOSFET with a drain-source voltage (VDS) of up to 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Manufactured using SJ_Deep-Trench technology and packaged in TO220, it has high performance and reliability.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 700V | 30(±V) | 3.5V | 8A | 540(mΩ) | SJ_Deep-Trench |
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 540m次
- Maximum drain current (ID): 8A
- Technology: SJ_Deep-Trench
-Package:TO220
Domain and module applications:
1. Power module: VBM17R08SE is suitable for low to medium power switching power supplies, inverters and DC-DC converters, providing high efficiency and reliability.
2. Electric vehicle control: In the motor drive system of electric vehicles, this device can be used in motor controllers and electric vehicle charging piles to provide high efficiency and stability.
3. Industrial automation: Suitable for industrial control systems, PLC control modules and motor drives, etc., providing reliable power switching solutions.
4. LED lighting: In LED lighting applications, it can be used to drive LED light strips, outdoor lighting, landscape lighting and other scenarios, providing stable power output and high-efficiency power conversion.
These are just some examples, actual application depends on specific design needs and system requirements.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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