VBM17R07S Product details
Product introduction:
The VBsemi VBM17R07S is a single N-channel field effect transistor with a drain-to-source voltage (VDS) of up to 700V and a drain current (ID) of 7A. Made with SJ_Multi-EPI technology, it has reliable performance and stability. The package is TO220, suitable for a variety of applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 700V | 30(±V) | 3.5V | 7A | 750 (mΩ) | SJ_Multi-EPI |
- Model: VBM17R07S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 750
- Drain current (ID): 7A
- Process technology: SJ_Multi-EPI
-Package:TO220
Domain and module applications:
1. Lighting module: Due to its high drain voltage and reliability, it is suitable for LED lighting drivers and switching power supply modules.
2. Solar inverter: The switch module used in the solar inverter converts the DC output of the solar panel into alternating current.
3. Power tools: Can be used in drive modules in power tools, such as electric drills, electric hammers, etc.
4. Automotive electronics: Suitable for power management and motor drive modules in automotive electronic systems, such as engine control units (ECUs) and electric vehicle drive controllers.
Technical support:
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