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VBM17R07S Product details

Product introduction:

Product introduction:
The VBsemi VBM17R07S is a single N-channel field effect transistor with a drain-to-source voltage (VDS) of up to 700V and a drain current (ID) of 7A. Made with SJ_Multi-EPI technology, it has reliable performance and stability. The package is TO220, suitable for a variety of applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 700V 30(±V) 3.5V 7A 750 (mΩ) SJ_Multi-EPI
Detailed parameter description:
- Model: VBM17R07S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 750
- Drain current (ID): 7A
- Process technology: SJ_Multi-EPI
-Package:TO220

Domain and module applications:

Examples of applicable fields and modules:
1. Lighting module: Due to its high drain voltage and reliability, it is suitable for LED lighting drivers and switching power supply modules.
2. Solar inverter: The switch module used in the solar inverter converts the DC output of the solar panel into alternating current.
3. Power tools: Can be used in drive modules in power tools, such as electric drills, electric hammers, etc.
4. Automotive electronics: Suitable for power management and motor drive modules in automotive electronic systems, such as engine control units (ECUs) and electric vehicle drive controllers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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