VBM175R06 Product details
Product introduction:
VBM175R06 is a single N-channel field effect transistor product produced by VBsemi. It has a drain-source voltage (VDS) of 750V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. When VGS=10V, the resistance in the on state is 1700mΩ, and the maximum drain current (ID) is 6A. It adopts Plannar technology and is packaged in TO220.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 750V | 30(±V) | 3.5V | 6A | 1700 (mΩ) | Plannar |
- Product model: VBM175R06
- Brand: VBsemi
- Parameters:
- Drain-source voltage (VDS): 750V
- Gate-source voltage (VGS): 30V (㊣)
- Threshold voltage (Vth): 3.5V
- On-state resistance (m次) when VGS=10V: 1700
- Maximum drain current (ID): 6A
- Technology: Plannar
-Package:TO220
Domain and module applications:
VBM175R06 products are suitable for the following fields and modules:
1. Power management module: Due to its high drain voltage and large drain current, it can be used to design high-performance switching power supply modules, such as DC-DC converters.
2. Electric vehicle charging pile: As the power switching element of the charging pile, it is used to control the output power of the charging pile to achieve fast charging of electric vehicles.
3. Power switch: used for various types of power switches, such as power adapters, UPS power supplies, etc., to ensure efficient power supply for equipment.
4. Industrial control system: In industrial automation control systems, it can be used in motor drivers, inverters and other modules to achieve efficient control of industrial production equipment and energy conversion.
Technical support:
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