VBM16R20SE Product details
Product introduction:
VBM16R20SE is a single N-channel MOSFET model produced by VBsemi. It has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and a drain current (ID) of 20A. Manufactured using SJ_Deep-Trench technology and packaged in TO220.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 600V | 30(±V) | 3.5V | 20A | 150(mΩ) | SJ_Deep-Trench |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 150
- Drain current (ID): 20A
- Technology: SJ_Deep-Trench
Domain and module applications:
1. Power switch: VBM16R20SE can be used as various types of power switches to stabilize output voltage and current, and is suitable for industrial equipment, consumer electronics and other fields.
2. Electric vehicle motor control: As a key component in the electric vehicle motor control system, this type of MOSFET can be used for motor control to achieve efficient energy conversion and drive.
3. LED lighting driver: In LED lighting systems, VBM16R20SE can be used for power conversion and regulation in LED drivers to ensure stable brightness and long life of LED lamps.
4. Power electronic converter: In power electronic converters used for industrial motor speed control and power conversion, this type of MOSFET can achieve efficient power conversion and regulation, improving the efficiency and reliability of the system.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image