VBM16R20S Product details
Product introduction:
VBM16R20S is a Single N-type MOSFET produced by VBsemi, manufactured using SJ_Multi-EPI technology. The device has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO220.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 600V | 30(±V) | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V gate voltage: 160m次
- Maximum drain current (ID): 20A
- Technology: SJ_Multi-EPI
Domain and module applications:
- Power module: VBM16R20S is suitable for various power modules, such as switching power supplies, inverters and frequency converters, and can be used in industrial, automotive and home electronic equipment.
- Automotive electronics: As power switches and inverters in electric and hybrid vehicles, this device can effectively drive electric motors and achieve energy conversion.
- LED lighting: VBM16R20S can be used for power switching and dimming functions in LED lighting systems, providing efficient power management and control.
- Industrial Automation: In the field of industrial automation, the device can be used to control high-power equipment and perform industrial automation tasks such as motor control and sensor interfacing.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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