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VBM16R11SE Product details

Product introduction:

Product introduction:
Model: VBM16R11SE
Brand: VBsemi
Package: TO220
parameter:
-Single N
- VDS(V): 600
-VGS(±V): 30
-Vth(V): 3.5
- VGS=10V(mΩ): 310
- ID (A): 11
- Technology: SJ_Deep-Trench

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 600V 30(±V) 3.5V 11A 310(mΩ) SJ_Deep-Trench
Detailed parameter description:
1. Single N: Single N channel
2. VDS(V): 600 - Saturated Drain-Source Voltage
3. VGS(㊣V): 30 - Gate-source voltage (maximum)
4. Vth(V): 3.5 - Gate threshold voltage
5. VGS=10V(m次): 310 - Drain-source resistance at VGS=10V
6. ID (A): 11 - Continuous Drain Current
7. Technology: SJ_Deep-Trench - deep trench structure technology

Domain and module applications:

Applicable areas and modules:
1. Low-power electronic devices: Due to its low drain-source resistance and moderate drain current, it is suitable for low-power electronic devices, such as power control modules in mobile devices and smart wearable devices.
2. Lighting applications: In lighting applications such as low-power LED drivers and lighting controllers, due to its high drain-source resistance and stable performance.
3. Small electronic equipment: Due to its TO220 package and low power consumption characteristics, it is suitable for use in power control and switching circuits in small electronic equipment.
4. Battery management system: In the battery management system, such as battery charge and discharge controller and battery protection module, they can be used to control the current and voltage during charging and discharging.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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