VBM16R11SE Product details
Product introduction:
Model: VBM16R11SE
Brand: VBsemi
Package: TO220
parameter:
-Single N
- VDS(V): 600
-VGS(±V): 30
-Vth(V): 3.5
- VGS=10V(mΩ): 310
- ID (A): 11
- Technology: SJ_Deep-Trench
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 600V | 30(±V) | 3.5V | 11A | 310(mΩ) | SJ_Deep-Trench |
1. Single N: Single N channel
2. VDS(V): 600 - Saturated Drain-Source Voltage
3. VGS(㊣V): 30 - Gate-source voltage (maximum)
4. Vth(V): 3.5 - Gate threshold voltage
5. VGS=10V(m次): 310 - Drain-source resistance at VGS=10V
6. ID (A): 11 - Continuous Drain Current
7. Technology: SJ_Deep-Trench - deep trench structure technology
Domain and module applications:
1. Low-power electronic devices: Due to its low drain-source resistance and moderate drain current, it is suitable for low-power electronic devices, such as power control modules in mobile devices and smart wearable devices.
2. Lighting applications: In lighting applications such as low-power LED drivers and lighting controllers, due to its high drain-source resistance and stable performance.
3. Small electronic equipment: Due to its TO220 package and low power consumption characteristics, it is suitable for use in power control and switching circuits in small electronic equipment.
4. Battery management system: In the battery management system, such as battery charge and discharge controller and battery protection module, they can be used to control the current and voltage during charging and discharging.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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