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VBM16R10 Product details

Product introduction:

Product introduction: VBsemi's VBM16R10 is a TO220 packaged N-channel field effect transistor, manufactured using Plannar technology. It has a drain-to-source voltage (VDS) of 600V, a drain current (ID) of 10A, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and an on-resistance (VGS) of 1000mΩ =10V). This product is suitable for low to medium power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 600V 30(±V) 3.5V 10A 1000 (mΩ) Plannar
Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 600V, VGS (gate-source voltage) is ㊣30V, Vth (gate threshold voltage) is 3.5V.
- Current parameters: ID (drain current) is 10A.
-Technical features: Using Plannar technology.
- On-resistance: 1000m次 at VGS=10V.
- Package: TO220.

Domain and module applications:

Examples of applicable fields and modules:
1. Power switch module: Suitable for medium and low power power switch modules, such as household power adapters, power tool chargers, etc.
2. Low power inverter: used for medium and low power inverter modules, such as small fans, water pump drivers, etc.
3. Automotive electronics: used in medium and low power modules in automotive electronic systems, such as interior lighting, car chargers, etc.
4. LED lighting controller: In low and medium power LED lighting products, it can be used to drive LED lamp beads, such as home lighting fixtures, landscape lights, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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