VBM16R08 Product details
Product introduction:
VBsemi's VBM16R08 is a single N-type MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS, positive and negative) of 30V, and a threshold voltage (Vth) of 3.5V. It uses Plannar technology and is packaged as TO220.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 600V | 30(±V) | 3.5V | 8A | 1070 (mΩ) | 780 (mΩ) | Plannar |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=4.5V: 1070
- On-resistance (m次) at VGS=10V: 780
- Maximum drain current (ID): 8A
Domain and module applications:
- Low frequency power converter: suitable for power switches in low frequency power converters, such as household appliances, consumer electronics, etc.
- Motor driver: can be used for power switches in motor drivers, such as motor drives in power tools, household appliances, etc.
- LED lighting controller: In the LED lighting system, it can be used as a switch tube for the LED driver to realize the control and adjustment of the LED light source and improve the energy efficiency and stability of the lighting system.
- Automotive electronic systems: Suitable for power management and drive control in automotive electronic systems, such as vehicle power management, drive control, etc.
Technical support:
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