VBM16R06 Product details
Product introduction:
VBM16R06 is a Single N-type MOSFET produced by VBsemi, manufactured using Plannar technology. The device has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO220.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 600V | 30(±V) | 3.5V | 6.2A | 1200 (mΩ) | 960 (mΩ) | Plannar |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 4.5V gate voltage: 1200m次
- Drain-source resistance (m次) at 10V gate voltage: 960m次
- Maximum drain current (ID): 6.2A
- Technology: Plannar
Domain and module applications:
- Power module: VBM16R06 is suitable for various power modules, such as switching power supplies, inverters and frequency converters, and can be used in industrial, automotive and home electronic equipment.
- LED lighting: In LED lighting systems, this device can be used for power switching and dimming functions in LED drivers, providing efficient power management and control.
- Electric vehicle controller: Due to its high voltage and high current characteristics, VBM16R06 is suitable for power switches and inverters in electric vehicle controllers, which can effectively drive electric motors and achieve energy conversion.
- Industrial Automation: In the field of industrial automation, the device can be used to control high-power equipment and perform industrial automation tasks such as motor control and sensor interfacing.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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