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VBM16R04 Product details

Product introduction:

Product introduction: VBM16R04 is a VBsemi brand single N-type field effect transistor, which is packaged as TO220 using Plannar technology. Features 600V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth), 1040mΩ (VGS=4.5V) and 1300mΩ (VGS=10V) on-resistance and 4A drain current (ID).

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 600V 30(±V) 3.5V 4A 1040 (mΩ) 1300 (mΩ) Plannar
Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 4.5V: 1040m次
- On-resistance when gate-source voltage is 10V: 1300m次
- Drain current (ID): 4A
- Technology: Plannar
-Package:TO220

Domain and module applications:

Examples of applicable fields and modules:
1. Power management module: suitable for power inverters, DC-DC converters and other modules to provide stable power conversion and power control.
2. Industrial electrical equipment: Power switch modules in industrial control systems provide precise control of motors and equipment, improving production efficiency and energy utilization.
3. Solar and wind energy converters: used in solar inverters, wind power inverters and other fields to convert renewable energy into usable electrical energy and inject it into the grid.
4. Electric vehicle charger: The power switch module in the electric vehicle charging pile realizes the control and management of the charging process of electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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