VBM165R20SE Product details
Product introduction:
VBsemi's VBM165R20SE is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 20A. It adopts SJ_Deep-Trench technology and is packaged as TO220.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 650V | 30(±V) | 3.5V | 20A | 150(mΩ) | SJ_Deep-Trench |
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 150
- Drain current (ID): 20A
- Technology: SJ_Deep-Trench
-Package:TO220
Domain and module applications:
1. Power switch module: Since VBM165R20SE has moderate drain current and low on-resistance, it is suitable for power switch modules, such as power adapters, battery chargers, etc.
2. Lighting driver: TO220 package is suitable for some low power density applications. VBM165R20SE can be used as the power switch module of LED lighting driver, providing high efficiency and reliability lighting solutions.
3. Automotive electronic systems: Its high withstand voltage and moderate drain current characteristics make it suitable for power switch modules in automotive electronic systems, such as electric drive systems and battery management systems of electric vehicles.
Technical support:
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