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VBM165R20SE Product details

Product introduction:

1. Product introduction:
VBsemi's VBM165R20SE is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 20A. It adopts SJ_Deep-Trench technology and is packaged as TO220.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 30(±V) 3.5V 20A 150(mΩ) SJ_Deep-Trench
2. Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 150
- Drain current (ID): 20A
- Technology: SJ_Deep-Trench
-Package:TO220

Domain and module applications:

3. Application areas and module examples:
1. Power switch module: Since VBM165R20SE has moderate drain current and low on-resistance, it is suitable for power switch modules, such as power adapters, battery chargers, etc.
2. Lighting driver: TO220 package is suitable for some low power density applications. VBM165R20SE can be used as the power switch module of LED lighting driver, providing high efficiency and reliability lighting solutions.
3. Automotive electronic systems: Its high withstand voltage and moderate drain current characteristics make it suitable for power switch modules in automotive electronic systems, such as electric drive systems and battery management systems of electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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