VBM165R20S Product details
Product introduction:
VBM165R20S is a single N-channel MOSFET model produced by VBsemi. It has a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and a drain current (ID) of 20A. Manufactured using SJ_Multi-EPI technology and packaged in TO220.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 650V | 30(±V) | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 160
- Drain current (ID): 20A
- Technology: SJ_Multi-EPI
Domain and module applications:
1. Power supply voltage stabilizing module: VBM165R20S can be used as a power switch in the power supply voltage stabilizing module to stabilize the output voltage and current, and is suitable for various industrial equipment and consumer electronics products.
2. Electric vehicle charging piles: As a key component in charging piles, this type of MOSFET can be used for power conversion and current control of charging piles to ensure safe charging of electric vehicles.
3. Solar inverter: In solar power generation systems, VBM165R20S can be used as a switching device in the inverter to achieve effective conversion and utilization of solar energy.
4. Power electronic speed regulator: In power electronic speed regulators used for industrial motor speed control, this type of MOSFET can achieve efficient power conversion and regulation and improve the operating efficiency of the equipment.
Technical support:
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