Product introduction：
**Product Introduction:**
VBM165R12 is a unipolar N-type field effect transistor launched by VBsemi. Features 650V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth), gate-source resistance at 10V gate-source voltage, and 12A drain current . Manufactured using Plannar technology and packaged in TO220, it is suitable for various power supplies and circuit modules.
**Detailed parameter description:**
- VDS(V): drain-source voltage, 650V
- VGS(±V): Gate-source voltage, ±30V
- Vth(V): threshold voltage, 3.5V
- VGS=10V(mΩ): Gate-source resistance (VGS=10V), 800mΩ
- ID (A): Drain current, 12A
- Technology: manufacturing technology, Plannar
-Package:TO220
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Domain and module applications：
**Applicable areas and module examples:**
1. **Power module**: Since VBM165R12 has high drain-source voltage and relatively low gate-source resistance, it is suitable for various power modules, including switching power supplies, inverters, etc.
2. **Motor drive**: As a field effect transistor, VBM165R12 can be used for various motor drives, such as DC motors, stepper motors, etc., and is especially suitable for high-power motor control.
3. **Industrial power system**: In industrial power systems that require high power control, such as converters, DC-AC converters, etc., VBM165R12 can be used as a key component to provide stable and reliable power control.
4. **Electric vehicle charger**: In electric vehicle chargers, components that need to withstand high voltage and high current are required. VBM165R12 can be used as a power switching device in the charger to achieve fast charging of electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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