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VBM165R11SE Product details

Product introduction:

Product introduction: VBsemi's VBM165R11SE is a single N-channel power field effect transistor (FET) manufactured using SJ_Deep-Trench technology. Its package is TO220, which has efficient power handling capabilities and stable and reliable performance. Suitable for various application scenarios requiring single N-channel FET.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 30(±V) 3.5V 11A 290(mΩ) SJ_Deep-Trench
Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 650V, VGS (gate-source voltage) is ㊣30V, and threshold voltage (Vth) is 3.5V.
- Current parameters: At VGS=10V, the drain-source resistance (RDSon) is 290m次, and the maximum drain current (ID) is 11A.

Domain and module applications:

Applicable areas and modules:
1. Power module: suitable for high-efficiency power converters, inverters and switching power supply modules.
2. Electric vehicles: Motor control and battery management systems for electric vehicles to provide efficient power output.
3. Industrial electronics: Can be used in industrial applications such as industrial motor drives, power inverters and power management units.
4. Solar energy and renewable energy: Suitable for energy conversion equipment such as solar inverters, photovoltaic power generation systems and wind power generation devices.
5. Communication equipment: high-voltage power management modules used in communication base stations, radio frequency power amplifiers and radar systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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