Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
30（±V） |
3.5V |
10A |
|
|
1100 (mΩ) |
Plannar |
**Detailed parameter description:**
- Brand: VBsemi
- Model: VBM165R10
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at gate-source voltage 10V: 1100 m次
- Maximum drain current (ID): 10A
- Technology: Plannar
-Package:TO220
Domain and module applications：
**Examples of applicable fields and modules:**
1. **Power management module**: VBM165R10 can be used for various power management modules, such as switching power supply, battery charge and discharge management, etc. Due to its high voltage and low on-resistance characteristics, it provides reliable power switching functionality.
2. **Electric vehicle driver**: In electric vehicle driver, this type of MOSFET can be used for electric vehicle motor drive and control. Its high voltage and current characteristics allow it to withstand the high voltage and current loads found in electric vehicle drives.
3. **Solar Inverter**: VBM165R10 can be used in the power switching circuit in solar inverters to achieve effective conversion and management of solar energy. Its high withstand voltage and high current characteristics make it suitable for high-voltage environments in solar power generation systems.
4. **Industrial Control**: In the field of industrial control, this type of MOSFET can be used to control various industrial equipment and robots. Its high voltage and low on-resistance characteristics allow it to withstand high voltage and current loads in industrial environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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