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VBM165R08S Product details

Product introduction:

Product introduction: VBsemi's VBM165R08S is a single N-channel power field effect transistor (FET) manufactured using SJ_Multi-EPI technology. Its package is TO220, which has stable and reliable performance. Suitable for various application scenarios requiring high performance single N-channel FET.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 30(±V) 3.5V 8A 550(mΩ) SJ_Multi-EPI
Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 650V, VGS (gate-source voltage) is ㊣30V, and threshold voltage (Vth) is 3.5V.
- Current parameters: At VGS=10V, the drain-source resistance (RDSon) is 550m次, and the maximum drain current (ID) is 8A.

Domain and module applications:

Applicable areas and modules:
1. Industrial electronics: used in industrial applications such as power converters, inverters and high-voltage motor drives.
2. Automotive electronics: Can be applied to motor control and battery management systems of hybrid vehicles.
3. Solar energy and renewable energy: suitable for energy conversion equipment such as solar inverters, photovoltaic power generation systems and wind power generation devices.
4. Medical equipment: Can be used in medical imaging equipment, high-voltage power supplies and power drive circuits.
5. Communication equipment: suitable for high-voltage power management modules in RF power amplifiers, base stations and communication systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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