Product introduction:
VBM165R07S is a VBsemi brand Single N MOSFET with a voltage resistance of 650V, a maximum gate-source voltage of 30V, and a threshold voltage of 3.5V. The device uses SJ_Multi-EPI technology and is packaged in TO220. Suitable for a variety of power supply and power control applications.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 650V | 30（±V） | 3.5V | 7A | 700 (mΩ) | SJ_Multi-EPI |
Detailed parameter description:
- Model: VBM165R07S
- Brand: VBsemi
- Type: Single N MOSFET
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-to-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V: 700m次
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO220
Example application:
1. Power module: Due to its high withstand voltage and current capability, VBM165R07S can be used in power switches and voltage regulators in power modules, such as inverters and voltage regulators.
2. Electric vehicle controller: In the electric vehicle controller, this device can be used in motor drive and battery management systems to achieve efficient energy conversion and power output control.
3. Solar inverter: In solar photovoltaic systems, VBM165R07S can be used in the DC-AC conversion stage of the inverter to convert solar energy into usable alternating current.
4. Industrial automation equipment: This device is suitable for power switch modules in industrial robots, PLCs and automation equipment, providing reliable power control and protection functions.
5. LED lighting system: As a power switching device in LED lighting systems, VBM165R07S can be used in LED drive circuits to achieve lighting brightness adjustment and energy-saving functions.
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