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VBM165R05SE Product details
Back to previous pageProduct introduction：
Product introduction: VBsemi's VBM165R05SE is a single N-channel power field effect transistor (FET) manufactured using SJ_Deep-Trench technology. It is packaged in TO220 and has reliable performance and efficient power handling capabilities. Suitable for various application scenarios requiring single N-channel FET.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 650V | 30（±V） | 3.5V | 5A | 780(mΩ) | SJ_Deep-Trench |
Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 650V, VGS (gate-source voltage) is ㊣30V, and threshold voltage (Vth) is 3.5V.
- Current parameters: At VGS=10V, the drain-source resistance (RDSon) is 780m次, and the maximum drain current (ID) is 5A.
Domain and module applications：
Applicable fields and modules:
1. Industrial electronics: suitable for high-efficiency power converters, inverters and motor drives.
2. Automotive electronics: It can be used in motor control and battery management systems of electric vehicles.
3. Solar energy and renewable energy: suitable for energy conversion equipment such as solar inverters, photovoltaic power generation systems and wind power generation devices.
4. Power supply: high-performance power modules for servers, communication base stations and industrial equipment.
5. Medical equipment: It can be used in high-voltage power supply control modules such as medical imaging equipment, X-ray generators and CT scanners.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
