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VBM165R04SE Product details

Product introduction:

Product introduction:
VBsemi's VBM165R04SE is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 4A. It adopts SJ_Deep-Trench technology and is packaged as TO220.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 30(±V) 3.5V 4A 1000(mΩ) SJ_Deep-Trench

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 1000
- Drain current (ID): 4A
- Technology: SJ_Deep-Trench
-Package:TO220

Domain and module applications:

Examples of application areas and modules:
1. Low-power power module: Due to the low drain current and high on-resistance of VBM165R04SE, it is suitable for the design of low-power power modules, such as household power adapters, mobile phone chargers, etc.
2. Power tool control: In some power tool control systems that require lower power but are stable and reliable, VBM165R04SE can be used as a power switch module, such as handheld electric drills, electric shavers, etc.
3. Industrial automation sensors: For industrial automation applications that require electric drive for sensors, VBM165R04SE can provide stable power conversion to ensure the accuracy and reliability of the sensors.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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