VBM165R04SE Product details
Product introduction:
VBsemi's VBM165R04SE is a single N-channel field effect transistor (Single N) product. Its key features include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a drain current (ID) of 4A. It adopts SJ_Deep-Trench technology and is packaged as TO220.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220 | Single-N | 650V | 30(±V) | 3.5V | 4A | 1000(mΩ) | SJ_Deep-Trench |
Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 1000
- Drain current (ID): 4A
- Technology: SJ_Deep-Trench
-Package:TO220
Domain and module applications:
1. Low-power power module: Due to the low drain current and high on-resistance of VBM165R04SE, it is suitable for the design of low-power power modules, such as household power adapters, mobile phone chargers, etc.
2. Power tool control: In some power tool control systems that require lower power but are stable and reliable, VBM165R04SE can be used as a power switch module, such as handheld electric drills, electric shavers, etc.
3. Industrial automation sensors: For industrial automation applications that require electric drive for sensors, VBM165R04SE can provide stable power conversion to ensure the accuracy and reliability of the sensors.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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