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VBM155R02 Product details

Product introduction:

This product is a Single N structure power MOSFET with low drain current (ID) and moderate drain-source voltage (VDS), and is suitable for low-power switching modules.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 550V 30(±V) 3V 2A 3000 (mΩ) Plannar
parameter:
- Polarity: Single N
- Maximum drain-source voltage (VDS): 550V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3V
- On-resistance (m次) when VGS=10V: 3000
- Maximum drain current (ID): 2A
- Technology: Plannar
Package: TO220

Domain and module applications:


This product is suitable for the following areas and modules:
1. Low power switch module:
Due to its low drain current (ID) and moderate drain-source voltage (VDS), it is suitable for low-power switching modules, such as small power switches, LED lighting dimmers and electronic switch controllers, etc., which can be implemented Efficient switching and control of small equipment.

2. Power management module:
It is suitable for power management modules, such as small power adapters, battery charge managers and voltage regulators, etc., which can provide stable power output and precise voltage regulation to meet the requirements for power management accuracy and stability.

3. Motor drive module:
It is suitable for small motor drive modules, such as fan controllers, small electric vehicle drivers and steering gear controllers, etc. It can provide reliable motor drive and precise speed control to meet the operation needs of small electric equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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