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VBM1152N Product details

Product introduction:

The VBM1152N is a single N-type Trench technology MOSFET with 150V drain-source voltage (VDS), ±20V gate-source voltage (VGS), 3V threshold voltage (Vth), and 18 milliohms on-resistance. It is capable of withstanding a maximum drain current (ID) of 70 amps. The device is packaged in TO220.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 150V 20(±V) 3V 70A 18 (mΩ) Trench
parameter:
- Type: Single N type
- VDS(V): 150
- VGS(㊣V): ㊣20
- Threshold voltage (V): 3
- On-resistance (miohms) at VGS=10V: 18
- Maximum drain current (ID) (amps): 70
- Technology: Trench
Package: TO220

Domain and module applications:

**Application Introduction:**
1. **Power Switch Module**: Since VBM1152N has moderate drain current and on-resistance, it is suitable for various power switch modules, including low to medium power DC-DC converters and power management systems.

2. **LED lighting**: This device can be used as a power switch module in LED lighting drive circuits to ensure the high efficiency and reliability of LED lamps.

3. **Automotive Electronics**: In the field of automotive electronics, VBM1152N can be used in modules such as battery management systems, electric vehicle drivers and on-board charging devices to achieve efficient power management and control.

4. **Industrial Control**: Due to its reliability and moderate current carrying capacity, this device is suitable for power switching modules in industrial control systems such as PLC (Programmable Logic Controller) and sensor controllers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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